The STRH8N10N1 is a single N-channel power MOSFET from Stmicroelectronics, packaged in a TO-39 case and designed for through hole mounting. It can handle a continuous drain current of up to 6A and a gate to source voltage of 20V. The device operates within a temperature range of -55°C to 150°C and has a power dissipation of 25W.
PackageTO-39
MountingThrough Hole
Power25W
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Technical Specifications
Stmicroelectronics STRH8N10N1 technical specifications.
General
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Strip |
| Power Dissipation | 25W |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STRH8N10N1 Datasheet
Download the complete datasheet for Stmicroelectronics STRH8N10N1 to view detailed technical specifications.
No datasheet is available for this part.