Automotive-grade N-channel power MOSFET rated for 650 V and 42 A in a TO-247 long leads package. The device belongs to the MDmesh DM6 fast-recovery diode series and provides 68 mΩ typical and 82 mΩ maximum on-resistance at VGS = 10 V. It is AEC-Q101 qualified and includes a fast-recovery body diode, low gate charge, 100% avalanche testing, high dv/dt ruggedness, and Zener protection. Typical dynamic characteristics include 54.4 nC total gate charge, 2805 pF input capacitance, and 123 ns reverse recovery time at the stated test conditions.
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| Channel Type | N-channel |
| Technology | MDmesh DM6 |
| Automotive Qualification | AEC-Q101 |
| Drain-Source Breakdown Voltage | 650V |
| Continuous Drain Current @ Tc=25°C | 42A |
| Continuous Drain Current @ Tc=100°C | 27A |
| Pulsed Drain Current | 140A |
| Gate-Source Voltage | ±25V |
| Power Dissipation @ Tc=25°C | 347W |
| On-Resistance Typ | 68mΩ |
| On-Resistance Max | 82mΩ |
| Junction-to-Case Thermal Resistance | 0.36°C/W |
| Junction-to-Ambient Thermal Resistance | 50°C/W |
| Avalanche Current | 7A |
| Single Pulse Avalanche Energy | 852mJ |
| Input Capacitance | 2805pF |
| Output Capacitance | 176pF |
| Reverse Transfer Capacitance | 1.3pF |
| Equivalent Output Capacitance | 480pF |
| Intrinsic Gate Resistance | 1.4Ω |
| Total Gate Charge | 54.4nC |
| Gate-Source Charge | 16.8nC |
| Gate-Drain Charge | 18.7nC |
| Turn-On Delay Time | 19ns |
| Rise Time | 25ns |
| Turn-Off Delay Time | 54ns |
| Fall Time | 9ns |
| Source-Drain Current | 42A |
| Source-Drain Pulsed Current | 140A |
| Forward On Voltage | 1.6V |
| Reverse Recovery Time | 123ns |
| Reverse Recovery Charge | 0.7µC |
| Reverse Recovery Current | 9.0A |
| Storage Temperature Range | -55 to 150°C |
