N-channel power MOSFET driver with 40V drain-to-source breakdown voltage and 6A continuous drain current. Features 60mΩ on-state resistance and 9A maximum output current. Operates from -55°C to 150°C, with 60W power dissipation. Surface mount DPAK package, RoHS compliant.
PackageDPAK
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VND7NV04-E technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 350ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 9A |
| Max Power Dissipation | 60W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| On-State Resistance | 60mR |
| Output Current | 6A |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 500ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VND7NV04-E Datasheet
Download the complete datasheet for Stmicroelectronics VND7NV04-E to view detailed technical specifications.
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