N-channel power MOSFET driver with 40V drain-to-source breakdown voltage and 6A continuous drain current. Features 60mΩ on-state resistance and 9A maximum output current. Operates from -55°C to 150°C, with 60W power dissipation. Surface mount DPAK package, RoHS compliant.
PackageDPAK
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VND7NV04-E technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
40V
Fall Time
350ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
9A
Max Power Dissipation
60W
Max Supply Current
100uA
Mount
Surface Mount
Number of Outputs
1
On-State Resistance
60mR
Output Current
6A
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OMNIFET II™, VIPower™
Supply Current
100uA
Threshold Voltage
2.5V
Turn-Off Delay Time
500ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VND7NV04-E Datasheet
Download the complete datasheet for Stmicroelectronics VND7NV04-E to view detailed technical specifications.
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