Sumitomo
EGN16C105MK
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
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Technical Specifications
Sumitomo EGN16C105MK technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Sumitomo EGN16C105MK Datasheet
Download the complete datasheet for Sumitomo EGN16C105MK to view detailed technical specifications.
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