RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
Sumitomo FHX45X technical specifications.
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
