RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IQ, 4 PIN
Sumitomo FLL810IQ-3C technical specifications.
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
