Sumitomo
FLM5359-4F
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
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Technical Specifications
Sumitomo FLM5359-4F technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Sumitomo FLM5359-4F Datasheet
Download the complete datasheet for Sumitomo FLM5359-4F to view detailed technical specifications.
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