RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
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| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
