This NPN silicon epitaxial planar transistor is intended for switching and amplifier applications in a SOT-23 plastic package. It is rated for 40 V collector-emitter voltage, 75 V collector-base voltage, 6.0 V emitter-base voltage, and 0.6 A collector current, with 350 mW power dissipation at 25 °C. The device provides a 300 MHz current gain-bandwidth product and a maximum 4.0 dB noise figure under the stated test conditions. Junction temperature is rated to 150 °C, storage temperature range is -55 to +150 °C, and the terminals are solderable per MIL-STD-202G Method 208. The datasheet states that the device is RoHS compliant.
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Taitron Components MMBT2222A technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
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