This silicon rectifier diode features a maximum operating temperature of 175 degrees Celsius and a maximum reverse voltage of 90 volts. It has a power dissipation of 0.3 watts and is packaged in a hermetically sealed glass DO-34 package with two terminals. The diode element is made of silicon and is a general purpose rectifier.
Taiwan Semiconductor 1SS133MR0G technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-34 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 90 |
| Power Dissipation-Max | 0.3 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
