The HS3MBHM4G is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a dual terminal position and is packaged in a DO-214AA package. The diode element is made of silicon and is a single element device. It is designed for general purpose rectification applications.
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Technical Specifications
Taiwan Semiconductor HS3MBHM4G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Taiwan Semiconductor HS3MBHM4G Datasheet
Download the complete datasheet for Taiwan Semiconductor HS3MBHM4G to view detailed technical specifications.
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