The MBR1050CTHC0G is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a TO-220AB package and is suitable for general purpose rectification applications. The diode has a maximum reverse voltage of 50 volts and is constructed with two silicon elements. It is designed for use in a variety of electronic circuits and is compatible with a range of operating conditions.
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Technical Specifications
Taiwan Semiconductor MBR1050CTHC0G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 50 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Taiwan Semiconductor MBR1050CTHC0G Datasheet
Download the complete datasheet for Taiwan Semiconductor MBR1050CTHC0G to view detailed technical specifications.
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