The P6SMB200R4G is a unidirectional silicon transient voltage suppressor diode with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a breakdown voltage of 162V and a non-repetitive peak reverse power dissipation of 600W. The diode is packaged in a 2-pin DO-214AA package and has a power dissipation of 3W. It is suitable for use in applications requiring transient voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
Taiwan Semiconductor P6SMB200R4G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 162 |
| Breakdown Voltage-Min | 180 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 220 |
| Power Dissipation-Max | 3 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Taiwan Semiconductor P6SMB200R4G Datasheet
Download the complete datasheet for Taiwan Semiconductor P6SMB200R4G to view detailed technical specifications.
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