PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 3A continuous collector current. This single element transistor is housed in a SOT-89 (TO-243AA) plastic package with 4 leads and a tab, offering a maximum power dissipation of 600mW. It boasts a minimum DC current gain of 180 at 100mA/2V and a typical transition frequency of 200MHz, operating within a temperature range of -55°C to 150°C.
PackageSOT-89
MountingSurface Mount
Quick Jump:
Technical Specifications
Taiwan Semiconductor TSB1424CYR RMG technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-89 |
| Package/Case | SOT-89 |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-243AA |
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 600mW |
| Material | Si |
| Minimum DC Current Gain | 180@100mA@2V |
| Maximum Transition Frequency | 200(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSB1424CYR RMG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSB1424CYR RMG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.