NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 1A, with a maximum power dissipation of 1200mW. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads. Offers a minimum DC current gain of 80 at 250mA and 10V, operating across a temperature range of -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Taiwan Semiconductor TSC873CW RPG technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-223
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.85(Max)
Package Width (mm)
3.75(Max)
Package Height (mm)
1.8(Max)
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
2.35(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-261AA
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
600V
Maximum Emitter Base Voltage
9V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
1A
Maximum Power Dissipation
1200mW
Material
Si
Minimum DC Current Gain
80@250mA@10V
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Taiwan Semiconductor TSC873CW RPG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSC873CW RPG to view detailed technical specifications.
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