N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 1200V collector-emitter voltage and 21A continuous collector current. This single-configuration IGBT offers a maximum power dissipation of 125000mW and a typical collector-emitter saturation voltage of 2.3V. Packaged in a TO-3P (TO-247AD) plastic case with 3 pins and a tab, it operates from -55°C to 150°C.
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Taiwan Semiconductor TSG10N120CN C0G technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.4(Max) |
| Package Width (mm) | 5.16(Max) |
| Package Height (mm) | 21.3(Max) |
| Seated Plane Height (mm) | 25.4(Max) |
| Pin Pitch (mm) | 5.7(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AD |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 1200V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 21A |
| Maximum Power Dissipation | 125000mW |
| Typical Collector Emitter Saturation Voltage | 2.3V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SDM41 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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