The TSM110NB04DCR is a dual N-Channel power MOSFET utilizing advanced trench technology to provide low RDS(ON) and low gate charge. This device is optimized for high-density applications requiring efficient power switching and minimal conductive losses. It features a high cell density design and is suitable for BLDC motor control, battery management, and DC-DC converter applications.
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Technical Specifications
Taiwan Semiconductor TSM110NB04DCR RLG technical specifications.
General
| Drain-Source Voltage (VDS) | 40V |
| Continuous Drain Current (ID) | 48A |
| Drain-Source On-State Resistance (RDS(on)) @ VGS=10V | 11mΩ |
| Drain-Source On-State Resistance (RDS(on)) @ VGS=4.5V | 16mΩ |
| Total Gate Charge (Qg) @ VGS=10V | 7.3nC |
| Operating Junction Temperature Range | -55 to +150°C |
| Configuration | Dual N-Channel |
Compliance
| RoHS | Compliant |
| Halogen-free | Compliant (IEC 61249-2-21) |
Datasheet
Taiwan Semiconductor TSM110NB04DCR RLG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM110NB04DCR RLG to view detailed technical specifications.
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