N-channel enhancement mode power MOSFET with a 500V drain-source voltage and 13A continuous drain current. Features a 3-pin TO-3PN through-hole package with a tab, offering a maximum gate-source voltage of ±30V and a gate threshold voltage of 4V. This single-element transistor boasts a low drain-source on-resistance of 480mΩ at 10V, with typical gate charge values of 17nC at 4.5V and 36nC at 10V. Operating temperature range is -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM13N50CN C0 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 19.9 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 13A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 480@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|36@10VnC |
| Typical Gate Charge @ 10V | 36nC |
| Typical Input Capacitance @ Vds | 1918@25VpF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM13N50CN C0 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM13N50CN C0 to view detailed technical specifications.
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