N-channel enhancement mode power MOSFET, 500V drain-source voltage, 13A continuous drain current. Features 480mΩ maximum drain-source on-resistance at 10V gate-source voltage and 36nC typical gate charge at 10V. Housed in a 3-pin TO-220 through-hole package with a maximum package length of 10.5mm and width of 4.83mm. Operates within a temperature range of -55°C to 150°C.
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Taiwan Semiconductor TSM13N50CZ C0 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 13A |
| Maximum Drain Source Resistance | 480@10VmOhm |
| Typical Gate Charge @ Vgs | 36@10VnC |
| Typical Gate Charge @ 10V | 36nC |
| Typical Input Capacitance @ Vds | 1918@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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