The TSM2312CX RFG is an N-Channel power MOSFET featuring advanced trench process technology for ultra-low on-resistance and high density cell design. It provides efficient power switching and is designed for applications such as load switches and PA switches. It is housed in a compact SOT-23 surface-mount package and is optimized for low power loss and high efficiency.
Temp Range-55 to +150°C
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Technical Specifications
Taiwan Semiconductor TSM2312CX RFG technical specifications.
General
| Drain-Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 4.9A |
| Drain-Source On-State Resistance (Max) @ Vgs=4.5V | 33mΩ |
| Drain-Source On-State Resistance (Typ) @ Vgs=4.5V | 15mΩ |
| Gate-Source Voltage (Vgs) | ±8V |
| Total Gate Charge (Qg) | 9.8nC |
| Gate Threshold Voltage (Vgs(th)) | 0.45 to 1.0V |
| Power Dissipation (Pd) | 1.04W |
| Operating Temperature Range | -55 to +150°C |
| Moisture Sensitivity Level (MSL) | 1 |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| Antimony-free | Yes |
Datasheet
Taiwan Semiconductor TSM2312CX RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2312CX RFG to view detailed technical specifications.
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