The TSM240N03CX RFG is a 30V N-channel power MOSFET utilizing advanced trench cell design to provide high density and ultra-low on-resistance. It features high-speed switching and is optimized for power management and load switch applications.
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Taiwan Semiconductor TSM240N03CX RFG technical specifications.
| Drain-Source Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 6.5A |
| Drain-Source On-State Resistance (Max) | 24mΩ |
| Gate Threshold Voltage (Typical) | 1.4V |
| Total Gate Charge (Qg) | 4.1nC |
| Power Dissipation | 1.56W |
| Operating Junction Temperature | -55 to +150°C |
| Thermal Resistance - Junction to Ambient | 80°C/W |
| RoHS | Compliant |
| Halogen-free | Compliant according to IEC 61249-2-21 |
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