N-channel enhancement mode power MOSFET featuring a 700V maximum drain-source voltage and 2A maximum continuous drain current. This single-element transistor is housed in a TO-251 IPAK package with a through-hole mounting style and 3 pins plus a tab. Key specifications include a maximum gate-source voltage of ±30V, 6500 mOhm drain-source resistance at 10V, and a typical gate charge of 9.5 nC at 10V. Maximum power dissipation is 45000 mW, with an operating temperature range from -55°C to 150°C.
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Taiwan Semiconductor TSM2N70CH C5 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 700V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2A |
| Maximum Drain Source Resistance | 6500@10VmOhm |
| Typical Gate Charge @ Vgs | 9.5@10VnC |
| Typical Gate Charge @ 10V | 9.5nC |
| Typical Input Capacitance @ Vds | 320@25VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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