The TSM4953DCS RLG is a 30V dual P-channel power MOSFET manufactured using an advanced trench process. It is designed for high-density cell design to achieve ultra-low on-resistance. This component is suitable for load switch and PA switch applications. It features a continuous drain current of -4.9A and is packaged in a standard SOP-8 surface mount package.
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Technical Specifications
Taiwan Semiconductor TSM4953DCS RLG technical specifications.
General
| Drain to Source Voltage (Vdss) | -30V |
| Continuous Drain Current (Id) | -4.9A |
| Drain-Source On-State Resistance (RDS(on)) @ Vgs=-10V | 60mOhm |
| Drain-Source On-State Resistance (RDS(on)) @ Vgs=-4.5V | 90mOhm |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)) | -1 to -3V |
| Input Capacitance (Ciss) | 745pF |
| Total Gate Charge (Qg) | 28nC |
| Operating Junction Temperature | -55 to +150°C |
| Configuration | Dual P-Channel |
Compliance
| RoHS | RoHS3 Compliant |
| Halogen Free | Yes (RLG suffix denotes Green/Halogen-Free) |
| Pb-free | Yes |
Datasheet
Taiwan Semiconductor TSM4953DCS RLG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM4953DCS RLG to view detailed technical specifications.
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