N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 4A continuous drain current. This single element transistor is housed in an IPAK package with through-hole mounting, offering 3 pins plus a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 2500 mOhm at 10V, and a maximum power dissipation of 50W. Operating temperature range spans from -55°C to 150°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM4NB60CH C5G technical specifications.
General
| Package/Case | IPAK |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.2 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 2500@10VmOhm |
| Typical Gate Charge @ Vgs | 14.5@10VnC |
| Typical Gate Charge @ 10V | 14.5nC |
| Typical Input Capacitance @ Vds | 500@25VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM4NB60CH C5G Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM4NB60CH C5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.