N-channel Power MOSFET, 600V drain-source voltage, 4A continuous drain current. Features enhancement mode operation, single element per chip, and a TO-220 package with 3 pins and a tab. Maximum power dissipation is 25W, with a minimum operating temperature of -55°C and a maximum of 150°C. Through-hole mounting is supported.
PackageITO-220
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM4NB60CI C0 technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | ITO-220 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.07(Max) |
| Package Width (mm) | 4.5(Max) |
| Package Height (mm) | 15.2(Max) |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 4A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 2500@10VmOhm |
| Typical Gate Charge @ Vgs | 14.5@10VnC |
| Typical Gate Charge @ 10V | 14.5nC |
| Typical Input Capacitance @ Vds | 500@25VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Taiwan Semiconductor TSM4NB60CI C0 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM4NB60CI C0 to view detailed technical specifications.
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