N-channel enhancement mode power MOSFET featuring a maximum drain-source voltage of 650V and a continuous drain current of 6.4A. This single-element transistor is housed in a TO-220 package with 3 pins, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 1200 mOhm at 10V, typical gate charge of 32 nC at 10V, and typical input capacitance of 905 pF at 25V. Maximum power dissipation is 125W, with an operating temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM7N65CZ C0 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6.4A |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Gate Charge @ Vgs | 32@10VnC |
| Typical Gate Charge @ 10V | 32nC |
| Typical Input Capacitance @ Vds | 905@25VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM7N65CZ C0 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM7N65CZ C0 to view detailed technical specifications.
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