The PH2729-25M is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 4A. It has a maximum power dissipation of 70W and is suitable for chassis mount applications. The transistor operates over a temperature range of -65°C to 200°C and is compliant with RoHS regulations.
Frequency2.9GHz
PackageCeramic
MountingChassis Mount, Screw
PolarityNPN
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Technical Specifications
TE Connectivity PH2729-25M technical specifications.
General
| Package/Case | Ceramic |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 60V |
| Continuous Collector Current | 4A |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 2.9GHz |
| Gain | 9.2dB |
| Max Collector Current | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Operating Frequency | 2.9 GHz |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
TE Connectivity PH2729-25M Datasheet
Download the complete datasheet for TE Connectivity PH2729-25M to view detailed technical specifications.
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