64Kb Non-Volatile SRAM module with 8K x 8 organization and 8-bit data bus width. Features a 70ns access time and operates from a 3V to 3.6V supply voltage. This through-hole mounted component is housed in a DIP-28 package and is RoHS compliant. Ideal for applications requiring fast, non-volatile data storage.
PackageModule
Current30mA
MountingThrough Hole
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Technical Specifications
Texas Instruments BQ4010LYMA-70N technical specifications.
General
| Access Time | 70ns |
| Access Time-Max | 70ns |
| Package/Case | Module |
| Data Bus Width | 8b |
| Density | 64Kb |
| Interface | Parallel |
| Lead Free | Contains Lead |
| Max Operating Temperature | 85°C |
| Memory Size | 64Kb |
| Memory Type | RAM, , Non-Volatile, NVSRAM |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 3V |
| Mount | Through Hole |
| Operating Supply Current | 30mA |
| Operating Supply Voltage | 3.3V |
| Organization | 8KX8 |
| Package Quantity | 14 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BQ4010LY |
| Supply Current | 30mA |
| Word Size | 8b |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments BQ4010LYMA-70N Datasheet
Download the complete datasheet for Texas Instruments BQ4010LYMA-70N to view detailed technical specifications.
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