Datasheets.com
Datasheets.com
2-Element 4-IN CMOS NAND Gate IC, PDIP, 3-18V
Texas Instruments

CD4012BE

2-Element 4-IN CMOS NAND Gate IC, PDIP, 3-18V

Dual 4-input CMOS NAND gate IC featuring two independent 4-input NAND gate circuits. Operates with a supply voltage range of 3V to 18V and offers a maximum output current of 6.8mA. This integrated circuit has a propagation delay of 90ns and a quiescent current of 5uA. Packaged in a 14-pin PDIP with gold contact plating, it supports through-hole mounting and has a maximum operating temperature of 125°C.

PackagePDIP
MountingThrough Hole
Quick Jump:

Technical Specifications

Texas Instruments CD4012BE technical specifications.

General

Package/Case
PDIP
Contact Plating
Gold
Height
4.57mm
High Level Output Current
-4.2mA
Input Capacitance
5pF
Lead Free
Lead Free
Length
19.3mm
Logic Function
NAND GATE
Low Level Output Current
4.2mA
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Output Current
6.8mA
Max Supply Voltage
18V
Min Supply Voltage
3V
Mount
Through Hole
Number of Bits
2
Number of Circuits
2
Number of Elements
2
Number of Gates
2
Number of Input Lines
4
Number of Inputs
4
Number of Output Lines
1
Number of Outputs
1
Output Current
6.8mA
Package Quantity
25
Packaging
Rail/Tube
Propagation Delay
90ns
Quiescent Current
5uA
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Schmitt Trigger Input
No
Series
4000B
Technology
CMOS
Termination
Through Hole
Turn-On Delay Time
250ns
Weight
0.032734oz
Width
6.35mm

Compliance

RoHS
Compliant

Datasheet

Texas Instruments CD4012BE Datasheet

Download the complete datasheet for Texas Instruments CD4012BE to view detailed technical specifications.

This datasheet cannot be embedded due to technical restrictions.