N-channel NexFET™ MOSFET, single element configuration. Features 25V drain-to-source breakdown voltage and 2.4mΩ drain-to-source resistance at 10V gate-to-source voltage. Continuous drain current capability of 100A. Operates from -55°C to 150°C with a 3.1W maximum power dissipation. Packaged in a 5.1mm x 6.1mm x 1.05mm SON package for surface mounting.
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Texas Instruments CSD16321Q5 technical specifications.
| Package/Case | SON |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Element Configuration | Single |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.05mm |
| Input Capacitance | 3.1nF |
| Lead Free | Contains Lead |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 2.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 9ns |
| Width | 5.1mm |
| RoHS | Compliant |
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