N-channel NexFET™ MOSFET, single element configuration. Features 25V drain-to-source breakdown voltage and 2.4mΩ drain-to-source resistance at 10V gate-to-source voltage. Continuous drain current capability of 100A. Operates from -55°C to 150°C with a 3.1W maximum power dissipation. Packaged in a 5.1mm x 6.1mm x 1.05mm SON package for surface mounting.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16321Q5 technical specifications.
General
Package/Case
SON
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
2.4mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
17ns
Gate to Source Voltage (Vgs)
10V
Height
1.05mm
Input Capacitance
3.1nF
Lead Free
Contains Lead
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.1V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
2.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.1V
Turn-Off Delay Time
27ns
Turn-On Delay Time
9ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16321Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16321Q5 to view detailed technical specifications.
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