
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 21A continuous drain current, and low 5mOhm drain-source resistance at 8V. NexFET process technology ensures efficient performance with typical gate charge of 6.8nC at 4.5V. Operating temperature range from -55°C to 150°C.
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Texas Instruments CSD16322Q5C technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | VSON-CLIP EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1.05(Max) |
| Pin Pitch (mm) | 1.27 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 21A |
| Maximum Gate Threshold Voltage | 1.4V |
| Maximum Drain Source Resistance | 5@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | [email protected]pF |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 01295 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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