N-channel Power MOSFET, 25V drain-source voltage, 21A continuous drain current. Features NexFET process technology, 4.5mOhm maximum drain-source resistance at 8V, and 6.5nC typical gate charge at 4.5V. Housed in an 8-pin VSON-CLIP EP package (3.3x3.3x1mm) with exposed pad, suitable for surface mounting. Operates from -55°C to 150°C.
PackageVSON-CLIP EP
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD16340Q3 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | VSON-CLIP EP |
| Package Description | Very Thin Small Outline No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3 |
| Package Width (mm) | 3.3 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 21A |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 4.5@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | [email protected]pF |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 730pF |
Compliance
| Cage Code | 01295 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Texas Instruments CSD16340Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16340Q3 to view detailed technical specifications.
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