N-channel Power MOSFET, 25V drain-source voltage, 21A continuous drain current. Features NexFET process technology, 4.5mOhm maximum drain-source resistance at 8V, and 6.5nC typical gate charge at 4.5V. Housed in an 8-pin VSON-CLIP EP package (3.3x3.3x1mm) with exposed pad, suitable for surface mounting. Operates from -55°C to 150°C.
PackageVSON-CLIP EP
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD16340Q3 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
VSON-CLIP EP
Package Description
Very Thin Small Outline No Lead, Exposed Pad
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3.3
Package Height (mm)
1
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
21A
Maximum Gate Threshold Voltage
1.1V
Maximum Drain Source Resistance
4.5@8VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
Maximum Power Dissipation
3000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
730pF
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD16340Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16340Q3 to view detailed technical specifications.
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