N-channel NexFET™ MOSFET, single element configuration, offering a 25V drain-to-source breakdown voltage and a low 2.4mΩ Rds On at a nominal 1.6V Vgs. This surface-mount component features a 100A continuous drain current, 3.1W power dissipation, and a compact SON package measuring 6.1mm x 5.1mm x 1.05mm. With fast switching characteristics including a 9ns fall time and 11.9ns turn-on delay, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16407Q5 technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.05mm |
| Input Capacitance | 2.66nF |
| Lead Free | Contains Lead |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 2.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 11.9ns |
| Width | 5.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD16407Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16407Q5 to view detailed technical specifications.
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