N-channel Power MOSFET featuring NexFET process technology. This single element device offers a maximum drain-source voltage of 25V and a continuous drain current of 22A. It is housed in an 8-pin SON EP surface-mount package with dimensions of 5mm x 6mm x 1mm. Key electrical characteristics include a low maximum drain-source on-resistance of 4.5 mOhm at 10V, typical gate charge of 6.7 nC at 4.5V, and typical input capacitance of 990 pF at 12.5V. Operating temperature range is from -55°C to 150°C.
PackageSON EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD16408Q5C technical specifications.
General
| Package Family Name | SON |
| Package/Case | SON EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1.05(Max) |
| Pin Pitch (mm) | 1.27 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | 16V |
| Maximum Continuous Drain Current | 22A |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | [email protected]pF |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 01295 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8542390001 |
| Schedule B | 8542390000 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Texas Instruments CSD16408Q5C Datasheet
Download the complete datasheet for Texas Instruments CSD16408Q5C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.