N-channel Power MOSFET featuring NexFET process technology. This single element device offers a maximum drain-source voltage of 25V and a continuous drain current of 22A. It is housed in an 8-pin SON EP surface-mount package with dimensions of 5mm x 6mm x 1mm. Key electrical characteristics include a low maximum drain-source on-resistance of 4.5 mOhm at 10V, typical gate charge of 6.7 nC at 4.5V, and typical input capacitance of 990 pF at 12.5V. Operating temperature range is from -55°C to 150°C.
PackageSON EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD16408Q5C technical specifications.
General
Package Family Name
SON
Package/Case
SON EP
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
6
Package Height (mm)
1
Seated Plane Height (mm)
1.05(Max)
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
16V
Maximum Continuous Drain Current
22A
Maximum Drain Source Resistance
4.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
Maximum Power Dissipation
3100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8542390001
Schedule B
8542390000
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD16408Q5C Datasheet
Download the complete datasheet for Texas Instruments CSD16408Q5C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.