N-channel NexFET™ MOSFET, 25V drain-to-source breakdown voltage, 1.8mOhm Rds On at 100A continuous drain current. Features a single SON5x6 package with tin, matte contact plating, suitable for surface mount applications. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 3.2W. Includes fast switching characteristics with a 12.7ns fall time and 16.6ns turn-on delay.
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Texas Instruments CSD16415Q5 technical specifications.
| Package/Case | VSON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 990mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 12.7ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.05mm |
| Input Capacitance | 4.1nF |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Rds On Max | 1.15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 16.6ns |
| Width | 5.1mm |
| RoHS | Compliant |
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