N-channel NexFET™ MOSFET, 25V drain-to-source breakdown voltage, 1.8mOhm Rds On at 100A continuous drain current. Features a single SON5x6 package with tin, matte contact plating, suitable for surface mount applications. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 3.2W. Includes fast switching characteristics with a 12.7ns fall time and 16.6ns turn-on delay.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD16415Q5 technical specifications.
General
Package/Case
VSON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
990mR
Drain to Source Voltage (Vdss)
25V
Element Configuration
Single
Fall Time
12.7ns
Gate to Source Voltage (Vgs)
16V
Height
1.05mm
Input Capacitance
4.1nF
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
1.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Rds On Max
1.15mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
16.6ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16415Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16415Q5 to view detailed technical specifications.
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