N-channel enhancement mode power MOSFET featuring NexFET process technology. This single MOSFET offers a maximum drain-source voltage of 30V and a continuous drain current of 28A. It boasts a low maximum drain-source on-resistance of 2.6 mOhm at 8V. The component is housed in an 8-pin VSONP EP package with a surface mount configuration, measuring 4.9mm in length and 5.75mm in width. Operating temperature range is -55°C to 150°C.
PackageVSONP EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD17301Q5A technical specifications.
General
| Package Family Name | SON |
| Package/Case | VSONP EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.75 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 28A |
| Maximum Drain Source Resistance | 2.6@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2660@15VpF |
| Maximum Power Dissipation | 3200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 01295 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Texas Instruments CSD17301Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17301Q5A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.