N-channel enhancement mode power MOSFET featuring NexFET process technology. This single MOSFET offers a maximum drain-source voltage of 30V and a continuous drain current of 28A. It boasts a low maximum drain-source on-resistance of 2.6 mOhm at 8V. The component is housed in an 8-pin VSONP EP package with a surface mount configuration, measuring 4.9mm in length and 5.75mm in width. Operating temperature range is -55°C to 150°C.
PackageVSONP EP
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD17301Q5A technical specifications.
General
Package Family Name
SON
Package/Case
VSONP EP
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.75
Package Height (mm)
1
Seated Plane Height (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
28A
Maximum Drain Source Resistance
2.6@8VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2660@15VpF
Maximum Power Dissipation
3200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD17301Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17301Q5A to view detailed technical specifications.
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