Single N-channel NexFET™ MOSFET with 30V drain-to-source breakdown voltage. Features 9.7mΩ drain-to-source resistance at 10V gate-to-source voltage and 73A continuous drain current. Surface mountable in a SON package with tin, matte contact plating. Operates from -55°C to 150°C with a maximum power dissipation of 3W. Includes 4.6ns turn-on delay and 2.6ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
Quick Jump:
Technical Specifications
Texas Instruments CSD17307Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
73A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
9.7mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
2.6ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
700pF
Lead Free
Contains Lead
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
1.3V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
10.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.3V
Turn-Off Delay Time
9.3ns
Turn-On Delay Time
4.6ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17307Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17307Q5A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
