Single N-channel NexFET™ MOSFET with 30V drain-to-source breakdown voltage. Features 9.7mΩ drain-to-source resistance at 10V gate-to-source voltage and 73A continuous drain current. Surface mountable in a SON package with tin, matte contact plating. Operates from -55°C to 150°C with a maximum power dissipation of 3W. Includes 4.6ns turn-on delay and 2.6ns fall time.
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| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2.6ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 700pF |
| Lead Free | Contains Lead |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.3V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 9.3ns |
| Turn-On Delay Time | 4.6ns |
| Width | 5mm |
| RoHS | Compliant |
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