N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 8.2mΩ drain-to-source resistance. This single element MOSFET offers a continuous drain current of 47A and a maximum power dissipation of 2.7W. Designed for surface mounting, it utilizes a SON 3mm x 3mm package with tin, matte contact plating. Operating across a temperature range of -55°C to 150°C, this component boasts fast switching characteristics with a fall time of 2.3ns and turn-off delay of 9.9ns.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Texas Instruments CSD17308Q3 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
47A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.2mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
2.3ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
700pF
Lead Free
Contains Lead
Length
3.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
1.3V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.7W
Rds On Max
10.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.3V
Turn-Off Delay Time
9.9ns
Turn-On Delay Time
4.5ns
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17308Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD17308Q3 to view detailed technical specifications.
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