N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 8.2mΩ drain-to-source resistance. This single element MOSFET offers a continuous drain current of 47A and a maximum power dissipation of 2.7W. Designed for surface mounting, it utilizes a SON 3mm x 3mm package with tin, matte contact plating. Operating across a temperature range of -55°C to 150°C, this component boasts fast switching characteristics with a fall time of 2.3ns and turn-off delay of 9.9ns.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Texas Instruments CSD17308Q3 technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2.3ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 700pF |
| Lead Free | Contains Lead |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 1.3V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Rds On Max | 10.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 9.9ns |
| Turn-On Delay Time | 4.5ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17308Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD17308Q3 to view detailed technical specifications.
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