N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 5.9mOhm Rds On at 10V. This surface-mount device in a SON package offers a continuous drain current of 100A and a maximum power dissipation of 3.1W. Operating across a temperature range of -55°C to 150°C, it boasts a nominal gate-source voltage of 1.3V with fast switching characteristics, including a 5ns fall time.
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| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.56nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.3V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 5.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.5ns |
| RoHS | Compliant |
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