N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 5.9mOhm Rds On at 10V. This surface-mount device in a SON package offers a continuous drain current of 100A and a maximum power dissipation of 3.1W. Operating across a temperature range of -55°C to 150°C, it boasts a nominal gate-source voltage of 1.3V with fast switching characteristics, including a 5ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
Quick Jump:
Technical Specifications
Texas Instruments CSD17310Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
5ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
1.56nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.3V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
5.1mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.3V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.5ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17310Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17310Q5A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.