30V N-channel NexFET™ power MOSFET, single element configuration. Features 26mΩ drain-to-source resistance at 10V gate-to-source voltage, 5A continuous drain current, and 30V drain-to-source breakdown voltage. Operates within a -55°C to 150°C temperature range. Packaged in a 2mm x 2mm x 0.8mm SON surface-mount package, tape and reel. RoHS compliant.
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| Package/Case | SON |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 1.3ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.8mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 4.2ns |
| Turn-On Delay Time | 2.8ns |
| Width | 2mm |
| RoHS | Compliant |
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