30V N-channel NexFET™ power MOSFET, single element configuration. Features 26mΩ drain-to-source resistance at 10V gate-to-source voltage, 5A continuous drain current, and 30V drain-to-source breakdown voltage. Operates within a -55°C to 150°C temperature range. Packaged in a 2mm x 2mm x 0.8mm SON surface-mount package, tape and reel. RoHS compliant.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
Quick Jump:
Technical Specifications
Texas Instruments CSD17313Q2 technical specifications.
General
Package/Case
SON
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
1.3ns
Gate to Source Voltage (Vgs)
10V
Height
0.8mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.3W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.3V
Turn-Off Delay Time
4.2ns
Turn-On Delay Time
2.8ns
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17313Q2 Datasheet
Download the complete datasheet for Texas Instruments CSD17313Q2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.