N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 2.9mΩ maximum drain-to-source resistance. This surface-mount device offers a continuous drain current of 100A and a maximum power dissipation of 3.2W. Operating across a temperature range of -55°C to 150°C, it boasts a 7.9ns fall time and 10.4ns turn-on delay time. The component is housed in a 5mm x 6mm SON package with tin contact plating and is RoHS compliant.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17501Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.4mR
Drain to Source Voltage (Vdss)
30V
Fall Time
7.9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.63nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
2.9mR
RoHS Compliant
Yes
Series
NexFET™
Turn-Off Delay Time
18ns
Turn-On Delay Time
10.4ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17501Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17501Q5A to view detailed technical specifications.
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