N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 2.9mΩ maximum drain-to-source resistance. This surface-mount device offers a continuous drain current of 100A and a maximum power dissipation of 3.2W. Operating across a temperature range of -55°C to 150°C, it boasts a 7.9ns fall time and 10.4ns turn-on delay time. The component is housed in a 5mm x 6mm SON package with tin contact plating and is RoHS compliant.
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| Package/Case | VSON |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.63nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Rds On Max | 2.9mR |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10.4ns |
| RoHS | Compliant |
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