N-Channel NexFET Power MOSFET featuring 30V Drain-to-Source Voltage (Vdss) and 48A Continuous Drain Current (ID). Surface mountable in an 8-VSON package with tin contact plating. Offers low 9mR Drain to Source Resistance and fast switching speeds with a 4.3ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3W.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17551Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
48A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
30V
Fall Time
4.3ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.272nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Rds On Max
8.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.7V
Turn-Off Delay Time
11.9ns
Turn-On Delay Time
9.1ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17551Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17551Q5A to view detailed technical specifications.
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