N-Channel NexFET Power MOSFET featuring 30V Drain-to-Source Voltage (Vdss) and 48A Continuous Drain Current (ID). Surface mountable in an 8-VSON package with tin contact plating. Offers low 9mR Drain to Source Resistance and fast switching speeds with a 4.3ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3W.
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| Package/Case | VSON |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.272nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 8.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 11.9ns |
| Turn-On Delay Time | 9.1ns |
| RoHS | Compliant |
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