N-channel enhancement mode power MOSFET featuring NexFET process technology. This single element silicon transistor offers a 30V drain-source voltage and 24A continuous drain current. The 8-pin VSONP EP package, measuring 4.9mm x 5.75mm x 1mm, is surface mountable with a 1.27mm pin pitch. Key specifications include a maximum drain-source on-resistance of 2.7mOhm at 10V and a maximum power dissipation of 3000mW, operating from -55°C to 150°C.
PackageVSONP EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD17555Q5A technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
VSONP EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.75
Package Height (mm)
1
Seated Plane Height (mm)
1
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
24A
Material
Si
Maximum Gate Threshold Voltage
1.9V
Maximum Drain Source Resistance
2.7@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
3875@15VpF
Maximum Power Dissipation
3000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD17555Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17555Q5A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.