N-channel NexFET™ MOSFET, surface mount, VSON package. Features 30V drain-to-source breakdown voltage and 1.8mΩ drain-to-source resistance. Continuous drain current up to 100A, with a maximum power dissipation of 3.1W. Operates from -55°C to 150°C. Includes 12ns fall time and 14ns turn-on delay.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Texas Instruments CSD17556Q5B technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.8mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
7.02nF
Lead Free
Contains Lead
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
1.4mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.4V
Turn-Off Delay Time
27ns
Turn-On Delay Time
14ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17556Q5B Datasheet
Download the complete datasheet for Texas Instruments CSD17556Q5B to view detailed technical specifications.
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