N-channel NexFET™ power MOSFET featuring a 40V drain-to-source voltage and 100A continuous drain current. This single element transistor offers a low 2.9 mOhm maximum drain-to-source resistance at a nominal 1.8V gate-to-source voltage. Packaged in a TO-220 through-hole mount with tin, matte contact plating, it operates from -55°C to 150°C and supports a maximum power dissipation of 216W. Key switching characteristics include a 9.3ns fall time, 11ns turn-on delay, and 33ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power216W
Quick Jump:
Technical Specifications
Texas Instruments CSD18502KCS technical specifications.
General
Package/Case
TO-220
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
40V
Element Configuration
Single
Fall Time
9.3ns
Gate to Source Voltage (Vgs)
20V
Height
4.7mm
Input Capacitance
4.68nF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
216W
Mount
Through Hole
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
216W
Rds On Max
2.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
4.58mm
Threshold Voltage
1.8V
Turn-Off Delay Time
33ns
Turn-On Delay Time
11ns
Width
8.7mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18502KCS Datasheet
Download the complete datasheet for Texas Instruments CSD18502KCS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.