N-channel NexFET™ power MOSFET featuring a 40V drain-to-source voltage and 100A continuous drain current. This single element transistor offers a low 2.9 mOhm maximum drain-to-source resistance at a nominal 1.8V gate-to-source voltage. Packaged in a TO-220 through-hole mount with tin, matte contact plating, it operates from -55°C to 150°C and supports a maximum power dissipation of 216W. Key switching characteristics include a 9.3ns fall time, 11ns turn-on delay, and 33ns turn-off delay.
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| Package/Case | TO-220 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 9.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.7mm |
| Input Capacitance | 4.68nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 216W |
| Mount | Through Hole |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 216W |
| Rds On Max | 2.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Thickness | 4.58mm |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 11ns |
| Width | 8.7mm |
| RoHS | Compliant |
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