N-channel NexFET™ power MOSFET featuring 40V drain-to-source breakdown voltage and 4.3mΩ Rds On at 8V gate drive. This single MOSFET offers a continuous drain current of 100A and a maximum power dissipation of 120W. Packaged in a 5mm x 6mm SON (VSON) surface-mount package with tin plating, it operates from -55°C to 150°C. Key electrical characteristics include a 1.8V threshold voltage, 2.64nF input capacitance, and fast switching times with a 4.5ns turn-on delay and 2.6ns fall time.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD18503Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4.7mR
Drain to Source Voltage (Vdss)
40V
Element Configuration
Single
Fall Time
2.6ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
2.64nF
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
4.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.8V
Turn-Off Delay Time
15ns
Turn-On Delay Time
4.5ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18503Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD18503Q5A to view detailed technical specifications.
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