N-channel NexFET™ MOSFET, single element, surface mount in a SON5x6 package. Features 60V drain-to-source breakdown voltage and 4.4mΩ Rds On at 1.8V nominal gate-source voltage. Continuous drain current capability of 100A with a maximum power dissipation of 3.1W. Operates from -55°C to 150°C, with fast switching times including a 4.4ns turn-on delay and 2.7ns fall time. RoHS compliant with tin matte contact plating.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD18531Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
4.4mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
2.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
3.84nF
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
4.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.8V
Turn-Off Delay Time
20ns
Turn-On Delay Time
4.4ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18531Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD18531Q5A to view detailed technical specifications.
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