N-channel NexFET™ MOSFET, single element, surface mount in a SON5x6 package. Features 60V drain-to-source breakdown voltage and 4.4mΩ Rds On at 1.8V nominal gate-source voltage. Continuous drain current capability of 100A with a maximum power dissipation of 3.1W. Operates from -55°C to 150°C, with fast switching times including a 4.4ns turn-on delay and 2.7ns fall time. RoHS compliant with tin matte contact plating.
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| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 2.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 3.84nF |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 4.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Thickness | 1mm |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 4.4ns |
| Width | 5mm |
| RoHS | Compliant |
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