N-channel NexFET™ MOSFET, single element, TO-220 package. Features 60V drain-to-source voltage, 4.2mΩ drain-to-source resistance, and 100A continuous drain current. Operates from -55°C to 150°C with a maximum power dissipation of 216W. Includes 7.8ns turn-on delay and 24.2ns turn-off delay. RoHS compliant with tin, matte contact plating.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power216W
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Technical Specifications
Texas Instruments CSD18532KCS technical specifications.
General
Package/Case
TO-220
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
5.6ns
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
4.68nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
216W
Mount
Through Hole
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
216W
Rds On Max
4.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
4.58mm
Threshold Voltage
1.8V
Turn-Off Delay Time
24.2ns
Turn-On Delay Time
7.8ns
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18532KCS Datasheet
Download the complete datasheet for Texas Instruments CSD18532KCS to view detailed technical specifications.
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