N-channel NexFET™ MOSFET, single element configuration, designed for through-hole mounting in a TO-220 package. Features a 60V drain-to-source voltage (Vdss) and a low 9.5mΩ maximum drain-to-source resistance (Rds On Max). Offers a continuous drain current (ID) of 100A and a maximum power dissipation of 98W. Operates across a wide temperature range from -55°C to 150°C, with a nominal gate-to-source voltage (Vgs) of 1.9V. RoHS compliant and lead-free.
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Texas Instruments CSD18534KCS technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 10.2mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.88nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 98W |
| Mount | Through Hole |
| Nominal Vgs | 1.9V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 98W |
| Rds On Max | 9.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 10.4ns |
| Turn-On Delay Time | 4.2ns |
| RoHS | Compliant |
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