N-channel NexFET™ MOSFET, single element configuration, designed for through-hole mounting in a TO-220 package. Features a 60V drain-to-source voltage (Vdss) and a low 9.5mΩ maximum drain-to-source resistance (Rds On Max). Offers a continuous drain current (ID) of 100A and a maximum power dissipation of 98W. Operates across a wide temperature range from -55°C to 150°C, with a nominal gate-to-source voltage (Vgs) of 1.9V. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power98W
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Technical Specifications
Texas Instruments CSD18534KCS technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
100A
Drain to Source Resistance
10.2mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
2.4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.88nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
98W
Mount
Through Hole
Nominal Vgs
1.9V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
98W
Rds On Max
9.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.9V
Turn-Off Delay Time
10.4ns
Turn-On Delay Time
4.2ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18534KCS Datasheet
Download the complete datasheet for Texas Instruments CSD18534KCS to view detailed technical specifications.
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