60V N-channel NexFET™ power MOSFET featuring 9.8mΩ Rds On at 10V Vgs. This single-element MOSFET offers a continuous drain current of 50A and a maximum power dissipation of 3.1W. The device is housed in a 5mm x 6mm SON package with tin, matte contact plating, suitable for surface mounting. Key electrical characteristics include a 60V drain-to-source breakdown voltage and a 1.9V nominal gate-to-source threshold voltage. Operating temperature range spans from -55°C to 150°C.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD18534Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
9.9mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
2ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
1.77nF
Lead Free
Contains Lead
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Elements
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
9.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.9V
Turn-Off Delay Time
15ns
Turn-On Delay Time
5.2ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18534Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD18534Q5A to view detailed technical specifications.
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